Scientists Achieve Successful Dry Etching Of Metal Carbide Using Vapor Plasma

A research group led by Specially Appointed Assistant Professor Thi Thuy Nga Nguyen, Professor Masaru Hori, and Professor Kenji Ishikawa at the Center for Low-Temperature Plasma Science, Nagoya University, Tokai National University Organization, has collaborated with Hitachi, Ltd. and Hitachi High-Tech Co., Ltd. In joint research with , we succeeded in dry etching to form a surface-degraded layer of ternary metal carbide (TiAlC) by introducing ammonia vapor into a floating wire plasma and volatilize and remove this material . This joint research group has achieved the world’s first chemical dry etching of metal nitrides used in silicon semiconductor gate electrode materials. This time, we have further evolved this technology and succeeded in microfabrication at the atomic layer level of ternary metal carbides, which are promising as cutting-edge silicon semiconductor materials .
In this research, we have realized cutting-edge microfabrication technology for materials using the plasma process *4) , which is necessary for improving the performance of silicon semiconductor integrated circuits used in smartphones and data centers and reducing power consumption . This technology is expected to promote technological development for the smart society advocated by Society 5.0 .
The results of this research were published in the international scientific journal Scientific Reports on November 26, 2022.