IIT Mandi to host International Colloquium on Technology Readiness for High Volume Semiconductor Chip Manufacturing (FAB) 2021
MANDI : Indian Institute of Technology (IIT) Mandi, in conjunction with Centre for Design and Fabrication of Electronic Devices (C4DFED), is hosting an International Colloquium on Technology Readiness for High Volume Chip Manufacturing (FAB) 2021 (ICTFAB-2021) on 15th and 16th November 2021. The colloquium will be graced with the presence of Dr. V K Saraswat, Hon’ble Member Niti Aayog, GOI, as the Chief Guest; Shri Banmali Agrawala, President-Infrastructure, Defense & Aerospace & Global Corporate Affairs, Tata Sons Pvt. Ltd., Bombay, India, as Honored Chief Technology Guest, and Shri Saurabh Gaur (IAS), Joint Secretary (Electronics), MEITY, GOI, as the Honored Guest.
Designed specially for Industry, Public Sector Units, Central/State, Government Policymakers, Academic Engineers, Scientists, Postdoctoral Research Fellows, Advanced level Science and Engineering students and Faculty members, this colloquium will provide a forum for presenting methodologies, approaches, and technology required for readiness of a blueprint in preparation for getting fab units in the country and achieving a world-class semiconductor manufacturing platform. Interested participants can register through the following webpage: https://ictfab.in/. The last date to register is 10th November 2021.
Speaking about ICTFAB-2021, Prof. Kenneth Gonsalves, formerly Distinguished Professor, IIT Mandi, International expert in Semicon fab technology and Chair, Chief Organizer & Convenor of ICTFAB-2021 said, “To the best of my knowledge this is the first such Semicon fab technology event in India. Based on my international experience and having worked with the only fab in India, it is possible for India to fast track a medium level fab to meet in country demands for Semicon requirements. This can be achieved within a reasonable time frame. This is a critical technology for India. ”
The Indian electronics industry is highly dependent on the import of economically significant 65/45/32/28 nm technology node chips and this import demand is expected to rise manifold by 2025. India has one of the best chip designers as well as excellent academic Institutions but the collective wisdom to convert this knowledge into a vibrant fab ecosystem is still lacking. To address this, ICYFAB-2021 will pave the path for developing an ecosystem to enable the Indian semiconductor industry to fulfill country demands and participate as a globally competitive entity for comprehensive Electronics System Design and Manufacturing.
Key topics to be covered in ICTFAB-2021 include:
➢ FAB in India: Present and Future
➢ MUV (365 nm) & DUV (248 nm) Technology
➢ 193 nm/193i Technology/SADP/SAQP
➢ Extreme Ultraviolet 13.5 nm Technology
➢ Device Fabrication 28 nm and Lower Nodes
➢ 65/45/32 nm Patterning and Device Fab Technology
ICTFAB-2021 will provide a platform to interact with several global leaders and domain experts of various advanced nanopatterning technologies, including 193/193 nm immersion/SADP/SAQP technology, and 13.5 nm EUVL. One key aspect of this colloquium is to highlight semiconductor fabrication in India at the 28 nm and lower technology nodes, considering immediate and future needs of India. Higher technology nodes 65/45/32 will also be considered as being technology appropriate in the Indian scenario. Existing fabs in India have the expertise to evolve into these nodes and will be involved in the colloquium.
Keynote & Plenary speakers from the colloquium include:
● Prof. Burn Lin, National Taiwan University, Taiwan
● Dr. Ralph Dammel, Chief Technologist, EMD/MERCK, USA
● Prof. Jinho Ahn, Director, EUV-IUCC Korea
● Dr. Patrick Naulleau, Director CXRO LBNL, Berkeley USA
● Dr. Indira P Seshadri, IBM, New York
ICTFAB-2021 will promote interaction among well-known semiconductor professionals across the globe and develop a strategic relationship to establish semiconductor fab-line(s) in India to achieve manufacturing excellence and improve global competitiveness.