IIT Hyderabad Ranked #8 in NIRF Engineering Rankings 2020

Hyderabad: Indian Institute of Technology Hyderabad has been rankedNo: 8 among all Engineering institutes as per the India Rankings 2020 conducted by the National Institutional Ranking Framework (NIRF), Ministry of Human Resource Development, Government of India. The Institute retained its position from last year when it was also ranked No: 8 in NIRF 2019.

The Institute was ranked No: 17 in the ‘Overall’ category, which is also an improvement over last year’s position of Rank No: 22.The NIRF Results were announced today (11th June 2020) by Shri. Ramesh Pokhriyal ‘Nishank,’ Hon’ble Minister of Human Resource Development, Government of India.

Speaking about the performance of the Institute in NIRF 2020, Prof.B.S Murty, Director, IIT Hyderabad, said, “We, at IIT Hyderabad, always strive for excellence in academics, research and a better future for our students. The hard work by each member of IIT Hyderabad has paved the way to climb 5 points up in the overall NIRF-2020 rankings (from 22 to 17) and retained our Engineering rank of 8 (and the best among the 2nd and 3rd generation IITs), and we will continue to deliver our best so that we can keep climbing this ladder.”

Under ‘Engineering’ category of NIRF 2020 this year, the Institute scored well in all parameters:

Teaching, Learning and Resources

82.51

Research and Professional Practices

52.47

Graduation Outcome

71.54

Outreach and Inclusivity

55.98

Perception

60.42

Under ‘Overall’ category of NIRF 2020 this year, the Institute scored well in all parameters:

Teaching, Learning and Resources

69.97

Research and Professional Practices

48.99

Graduation Outcome

66.96

Outreach and Inclusivity

58.36

Perception

46.7

NIRF was started in 2015. It is a methodology to rank educational institutions across the country. The parameters used for ranking broadly cover “Teaching, Learning and Resources,” “Research and Professional Practices,” “Graduation Outcome,” “Outreach and Inclusivity,” and “Perception”.